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Proceedings Paper

Optimization of reflection electro-absorption modulators
Author(s): Bardia Pezeshki; Dominique Thomas; James S. Harris
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Paper Abstract

Characteristics of reflection electroabsorption modulators such as insertion loss and contrast ratio are discussed in terms of the absorption changes. Ultimate performances and simple design equations are derived. Both InGaAs/GaAs and GaAs/AlGaAs modulators were fabricated according to the designs rules; the modulators exhibit state-of-the-art performances. For the GaAs/AlGaAs device, a reflection change of 66 percent at 5 V operating voltage was achieved with a 1.2 dB insertion loss.

Paper Details

Date Published: 1 February 1991
PDF: 7 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24565
Show Author Affiliations
Bardia Pezeshki, Stanford Univ. (United States)
Dominique Thomas, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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