
Proceedings Paper
Efficient optical waveguide modulation based on Wannier-Stark localization in a InGaAs-InAlAs superlatticeFormat | Member Price | Non-Member Price |
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Paper Abstract
We report the observation of Wannier-Stark localization in a InGaAs-InAlAs superlattice waveguide. Using the oblique transition connecting electrons and holes localized in adjacent wells we achieve efficient intensity modulation at 1 . 57jim incident light wavelength under TE polarization mode. A 16 dB extinction ratio is obtained by applying a 0. 75V drive voltage to a 320 j. tm long waveguide. On-state attenuation is only 3 dB.
Paper Details
Date Published: 1 February 1991
PDF: 6 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24564
Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)
PDF: 6 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24564
Show Author Affiliations
Erwan Bigan, Lab. de Bagneux/CNET (France)
Michel Allovon, Lab. de Bagneux/CNET (France)
Madeleine Carre, Lab. de Bagneux/CNET (France)
Michel Allovon, Lab. de Bagneux/CNET (France)
Madeleine Carre, Lab. de Bagneux/CNET (France)
Alain Carenco, Lab. de Bagneux/CNET (France)
Paul H. Voisin, L'Ecole Normale Superieure (France)
Paul H. Voisin, L'Ecole Normale Superieure (France)
Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)
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