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Proceedings Paper

Novel doping superlattice-based PbTe-IR detector device
Author(s): Josef Oswald; Manfred Pippan; Beate Tranta; Guenther E. Bauer
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Paper Abstract

The concept of selectively contacted PbTe p-n-p or p-i-n-i-p structures offers interesting new features for IR-detection. As shown by a simple model and demonstrated by photo Hall and time resolved photoconductivity measurements, an enhancement of the photoconductive response beyond the expected effect of the optically generated carriers results. Control of the response time is available by background illumination. The photo Hall effect itself represents another new detection principle.

Paper Details

Date Published: 1 February 1991
PDF: 10 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24563
Show Author Affiliations
Josef Oswald, Montanuniv. Leoben (Austria)
Manfred Pippan, Montanuniv. Leoben (Austria)
Beate Tranta, Montanuniv. Leoben (Austria)
Guenther E. Bauer, Montanuniv. Leoben (Austria)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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