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Proceedings Paper

Picosecond optoelectronic semiconductor switching and its application
Author(s): Volkmar Brueckner; Harald Bergner; Matthias Lenzner; Reiner Strobel
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Paper Abstract

Using psYAG laser controlled optoelectronic switching technique semiconductor carrier recombination times and mobilities at different conditions (different preparation carriers in different valleys) were measured Measurements of the response of a fast photodiode (about 100 ps) of a 6 6Hz transistor (50 ps) and the dispersion of a ps electrical pulse along a cable (broadening from 25 ps to about 1 ns) are reported.

Paper Details

Date Published: 1 February 1991
PDF: 8 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24562
Show Author Affiliations
Volkmar Brueckner, Friedrich-Schiller-Univ. Jena (Germany)
Harald Bergner, Friedrich-Schiller-Univ. Jena (Germany)
Matthias Lenzner, Friedrich-Schiller-Univ. Jena (Germany)
Reiner Strobel, Friedrich-Schiller-Univ. Jena (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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