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Proceedings Paper

III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation
Author(s): Samir Aboulhouda; Manijeh Razeghi; Jean-Pierre Vilcot; Didier J. Decoster; M. Francois; Sophie Maricot
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Paper Abstract

The first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies is presented. The photoreceiver includes a GaInAs/GaAs M.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a silicon substrate. In comparison with a PIN photodiode loaded with a 50 Omega resistor, approximately 10 dB gain has been obtained at 7 GHz.

Paper Details

Date Published: 1 February 1991
PDF: 5 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24561
Show Author Affiliations
Samir Aboulhouda, Univ. des Sciences et Techniques de Lille-Flandres-Artois (France)
Manijeh Razeghi, Thomson-CSF (United States)
Jean-Pierre Vilcot, Univ. des Sciences et Techniques de Lille-Flandres-Artois (France)
Didier J. Decoster, Univ. des Sciences et Techniques de Lille-Flandres-Artois (France)
M. Francois, Univ. des Sciences et Techniques de Lille-Flandres-Artois (France)
Sophie Maricot, Univ. des Sciences et Techniques de Lille-Flandres-Artois (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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