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Proceedings Paper

Refractive index of multiple-quantum-well waveguides subject to impurity induced disordering using boron and fluorine
Author(s): Stein I. Hansen; John H. Marsh; John Stuart Roberts; C. Jeynes
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Paper Abstract

Studies have been made of the effect of boron and fluorine impurity induced disordering on the refractive index of AlxGaixAs multiple quantum well waveguides. A grating coupler formed in low-index material was used to determine experimentally the changes in refractive index obtained in partially disordered material. Over the measured wavelength range 820-920 nm substantial changes 1 in the refractive index were observed. Fluorine was found to produce larger changes than boron for similar annealing conditions.

Paper Details

Date Published: 1 February 1991
PDF: 9 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24552
Show Author Affiliations
Stein I. Hansen, Univ. of Glasgow (United Kingdom)
John H. Marsh, Univ. of Glasgow (United Kingdom)
John Stuart Roberts, Univ. of Sheffield (United Kingdom)
C. Jeynes, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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