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Proceedings Paper

Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates
Author(s): Dethard Peters; Joerg Mueller
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Paper Details

Date Published: 1 February 1991
PDF: 12 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24551
Show Author Affiliations
Dethard Peters, Technical Univ. of Hamburg-Harburg (Germany)
Joerg Mueller, Technical Univ. of Hamburg-Harburg (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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