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Proceedings Paper

Bias dependence of the hole tunneling time in AlAs/GaAs resonant tunneling structures
Author(s): Chris A. Van Hoof; Etienne Goovaerts; Gustaaf Borghs
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Paper Details

Date Published: 1 February 1991
PDF: 10 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24547
Show Author Affiliations
Chris A. Van Hoof, Interuniversity Microelectronics Ctr. (Belgium)
Etienne Goovaerts, Univ. of Antwerp (Belgium)
Gustaaf Borghs, Interuniversity Microelectronics Ctr. (Belgium)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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