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Proceedings Paper

Advanced InGaAs/InP p-type pseudomorphic MODFET
Author(s): Eric Malzahn; Michael Heuken; Detlev A. Gruetzmacher; M. Stollenwerk; Klaus Heime
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Paper Abstract

A new layer structure is investigated which consists of an In(x)Ga(1-x)As (x in the range 0.57-0.75) channel embedded in Zn-doped InP grown on an InP substrate by low pressure-MOVPE. Increasing spacer thickness leads to an increasing Hall mobility and a decreasing sheet carrier density. Photoluminescence measurements at 2 K show the high quality of the quantum wells. A transistor (2.0 x 60 microns) with Ni/AuZn/Ni ohmic contacts and a Ti/Pt/Au Schottky-gate shows a room temperature extrinsic transconductance of 11.5 mS/mm.

Paper Details

Date Published: 1 February 1991
PDF: 6 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24542
Show Author Affiliations
Eric Malzahn, RWTH Aachen (Germany)
Michael Heuken, RWTH Aachen (Germany)
Detlev A. Gruetzmacher, RWTH Aachen (Germany)
M. Stollenwerk, RWTH Aachen (Germany)
Klaus Heime, RWTH Aachen (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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