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Proceedings Paper

Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors
Author(s): Igor K. Czajkowski; Jeremy Allam; Alfred R. Adams
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Paper Details

Date Published: 1 February 1991
PDF: 12 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24541
Show Author Affiliations
Igor K. Czajkowski, Univ. of Surrey (United Kingdom)
Jeremy Allam, Univ. of Surrey (United Kingdom)
Alfred R. Adams, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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