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Proceedings Paper

InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy
Author(s): Boris S. Elman; Jagannath Chirravuri; A. N. M. Masu Choudhury; Andrew Silletti; Andrew J. Negri; J. Powers
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Paper Abstract

The paper reports on InGaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 13 micron fabricated on GaAs substrates. Different Schottky barrier enhancement cap layers were used in order to study the thermal stability and device performance characteristics. Dark current, dc responsivity, and high frequency response results are reported. Relationship between the responsivity and the cap structure is discussed. Using oxygen plasma passivation, photodetectors with low dark current and high frequency performance were obtained.

Paper Details

Date Published: 1 February 1991
PDF: 7 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24540
Show Author Affiliations
Boris S. Elman, GTE Labs. Inc. (United States)
Jagannath Chirravuri, GTE Labs. Inc. (United States)
A. N. M. Masu Choudhury, GTE Labs. Inc. (United States)
Andrew Silletti, GTE Labs. Inc. (United States)
Andrew J. Negri, GTE Labs. Inc. (United States)
J. Powers, GTE Labs. Inc. (United States)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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