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Proceedings Paper

Characterization of picosecond GaAs metal-semiconductor-metal photodetectors
Author(s): Josef Rosenzweig; C. Moglestue; A. Axmann; Joachim Schneider; Axel Huelsmann; M. Lambsdorff; Juergen Kuhl; Markus Klingenstein; H. Leier; Alfred W. B. Forchel
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Paper Details

Date Published: 1 February 1991
PDF: 11 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24539
Show Author Affiliations
Josef Rosenzweig, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
C. Moglestue, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
A. Axmann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Joachim Schneider, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Axel Huelsmann, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
M. Lambsdorff, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Juergen Kuhl, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Markus Klingenstein, Max-Planck-Institut fuer Festkoerperforschung (Germany)
H. Leier, Univ. Stuttgart (Germany)
Alfred W. B. Forchel, Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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