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Proceedings Paper

Performances of gallium arsenide on silicon substrate photoconductive detectors
Author(s): Monique T. Constant; Luc Boussekey; Didier J. Decoster; Jean-Pierre Vilcot
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Paper Abstract

Planar photoconductors made with GaAs on silicon substrate have been studied with respect to static and dynamic responsivities as well as noise levels in the 1 Hz - 100 kHz frequency range. The results obtained have led to the determination of the specific detectivity which in turn is compared to those of GaAs planar photoconductors and Si photodiodes.

Paper Details

Date Published: 1 February 1991
PDF: 7 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24538
Show Author Affiliations
Monique T. Constant, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
Luc Boussekey, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
Didier J. Decoster, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
Jean-Pierre Vilcot, Univ. des Sciences et Techniques de Lille Flandres Artois (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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