Share Email Print
cover

Proceedings Paper

Optoelectronic and optical bistabilities of photocurrent and photoluminescence at low-temperature avalanche breakdown in GaAs epitaxial films
Author(s): Oleg A. Ryabushkin; Nikolay S. Platonov; Vladimir A. Sablikov; V. I. Sergeyev; Vladimir Antonovich Bader
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Epitaxial films of n-GaAs are studied at helium temperature by means of low-temperature impurity breakdown to study optical and optoelectronic bistabilities. During switching the carrier concentration is found to increase by about one order of magnitude, and the donors become ionized while achieving increased carrier mobility. The bistabilities are shown to be of interest for the design of switching elements that could include memory elements for information processing.

Paper Details

Date Published: 1 February 1991
PDF: 5 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24534
Show Author Affiliations
Oleg A. Ryabushkin, Institute of Radio Engineering and Electronics (Russia)
Nikolay S. Platonov, Institute of Radio Engineering and Electronics (Russia)
Vladimir A. Sablikov, Institute of Radio Engineering and Electronics (Russia)
V. I. Sergeyev, Institute of Radio Engineering and Electronics (Russia)
Vladimir Antonovich Bader, Institute of Radio Engineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

© SPIE. Terms of Use
Back to Top