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Proceedings Paper

Optoelectronic and optical bistabilities of photocurrent and photoluminescence at low-temperature avalanche breakdown in GaAs epitaxial films
Author(s): Oleg A. Ryabushkin; Nikolay S. Platonov; Vladimir A. Sablikov; V. I. Sergeyev; Vladimir Antonovich Bader
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Paper Details

Date Published: 1 February 1991
PDF: 5 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24534
Show Author Affiliations
Oleg A. Ryabushkin, Institute of Radio Engineering and Electronics (Russia)
Nikolay S. Platonov, Institute of Radio Engineering and Electronics (Russia)
Vladimir A. Sablikov, Institute of Radio Engineering and Electronics (Russia)
V. I. Sergeyev, Institute of Radio Engineering and Electronics (Russia)
Vladimir Antonovich Bader, Institute of Radio Engineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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