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Proceedings Paper

InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate
Author(s): Luc Buydens; Piet M. A. Demeester; Peter M. De Dobbelaere; Peter Van Daele
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Paper Abstract

InGaAs/AlGaAs Strained Layer Superlattices (SLS) have been grown using the MOVPE technique. These layers were characterized by X-ray, photoluminescence, photocurrent and transmission measurements. With this material optical modulators and LEDs were made working at a wavelength for which the GaAs substrate is transparent. Reverse biasing the modulator resulted in a large absorption shift in the photocurrent spectra due to the Quantum Confined Stark Effect (QCSE) on the quantum wells. An InGaAs/AlGaAs SLS compared favorably with similar InGaAs/GaAs SLSs. A back-side emitting LED, with an InGaAs SQW as the active layer, gave a maximal output power of about 8 micro-W/mA/Sr.

Paper Details

Date Published: 1 February 1991
PDF: 9 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24532
Show Author Affiliations
Luc Buydens, Univ. of Gent (Belgium)
Piet M. A. Demeester, Univ. of Gent (Belgium)
Peter M. De Dobbelaere, Univ. of Gent (Belgium)
Peter Van Daele, Univ. of Gent (Belgium)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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