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Proceedings Paper

CD metrology microscope SiSCAN 7325TQ for back-side measurement
Author(s): Masaru Morita; Shigeru Tachikawa; Mikio Iida
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Paper Abstract

Improvement of pattern placement accuracy is an important factor for the development of the electron beam (EB) lithography system for the next-generation photomask. It has been qualitatively pointed out that pattern shift error is induced by surface distortion of photomask. In this paper, we quantified pattern shift error induced by mask process and have identified aeolotropic magnification error and negligible orthogonality error. These results obtained by experiment and simulation indicate that attention must be paid to pattern shift error induced by mask process in fabrication of the next-generation photomask. Thus, a more rigid and stiffer photomask is required to reduce pattern shift error induced by coating and developing.

Paper Details

Date Published: 24 July 1996
PDF: 7 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245228
Show Author Affiliations
Masaru Morita, Ishikawajima-Harima Heavy Industries Co., Ltd. (Japan)
Shigeru Tachikawa, Ishikawajima-Harima Heavy Industries Co., Ltd. (Japan)
Mikio Iida, Ishikawajima-Harima Heavy Industries Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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