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Proceedings Paper

Fabrication of dense contact patterns using halftone phase-shifting mask with off-axis illumination
Author(s): Hyoungjoon Kim; Jongwook Kye; Dae-Yup Lee; Sang-Gyun Woo; Hoyoung Kang; Young-Bum Koh
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Paper Abstract

We have investited the performance of the halftone phase-shifting mask (HT PSM) with various illuminations for contact patterns of different pitches in DUV photo lithography . It was found that illumination could be optimized as a function of the pitch. Highly coherent illumination was the best for isolated contact patterns but it was the worst for extremely dense contact patterns due to optical proximity effect and interference which occurred between the primary peaks and the secondary peaks of neighboring contact holes. For extremely dense contact patterns, off-axis illumination (OAI) was found to be the most appropriate compared to conventional illuminations because extremely dense contact patterns show the optical proximity effects which was observed similarly for equal line and space patterns. We found that HT PSM combined with OAI can be used for fabricating the extremely dense contact patterns of high density devices such as 256M and 1 G bit DRAM.

Paper Details

Date Published: 24 July 1996
PDF: 9 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245224
Show Author Affiliations
Hyoungjoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Jongwook Kye, Samsung Electronics Co., Ltd. (South Korea)
Dae-Yup Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Hoyoung Kang, Samsung Electronics Co., Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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