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Proceedings Paper

Focused ion-beam imaging of defects on deep-UV single-layer halftone masks
Author(s): Hiroko Nakamura; Haruki Komano; Kazuyoshi Sugihara; T. Koike; Iwao Higashikawa
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Paper Abstract

At the first stage of defect repair on masks with focused ion beam (FIB), it is necessary to recognize defects by imaging. One of the problems in halftone mask imaging by FIB is that the contrast between halftone (HT) film and quartz (Qz) substrate is not sufficient to recognize material. We investigated the methods of the defect area distinction in deep UV silicon nitride (SiNx) single-layer halftone masks to avoid the transmittance decrease of masks induced by FIB irradiation. The cause of the difficulty in the area distinction is that the difference between the mean secondary electron intensity of HT area and that of Qz area is small in comparison with the width of the secondary electron intensity distributions. A conventional filter was found to be effective to narrow the intensity distributions and the area of defects on halftone masks could be recognized by means of the image filter in the images obtained with a low FIB dose.

Paper Details

Date Published: 24 July 1996
PDF: 10 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245222
Show Author Affiliations
Hiroko Nakamura, Toshiba Corp. (Japan)
Haruki Komano, Toshiba Corp. (Japan)
Kazuyoshi Sugihara, Toshiba Corp. (Japan)
T. Koike, Toshiba Corp. (Japan)
Iwao Higashikawa, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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