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Proceedings Paper

Characteristics of Ta4B/SiC x-ray mask blanks
Author(s): Ryo Ohkubo; Tsutomu Shoki; Hideaki Mitsui; Noromichi Annaka; Yoichi Yamaguchi
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Paper Abstract

Stress controllability and stress distribution of Ta4B absorber on polished SiC films have been investigated. Dry etching behaviors of Cr and Si02 films have been characterized as etch-masking and etch-stopping materials. Xe gas sputtering was found to be effective to obtain higher stress controllability and more uniform stress distribution for Ta4B film compared to Ar gas sputtering. Cr film has been found to have high etching selectivity of more than 15 to the Ta4B film during the ECR etching with Cl2 gas, which is proven to be suitable for etch-masking and etch-stopping layers of the Ta4B absorber.

Paper Details

Date Published: 24 July 1996
PDF: 6 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245215
Show Author Affiliations
Ryo Ohkubo, HOYA Corp. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Hideaki Mitsui, HOYA Corp. (Japan)
Noromichi Annaka, HOYA Corp. (Japan)
Yoichi Yamaguchi, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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