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Proceedings Paper

Simulation of x-ray mask displacement by absorber and membrane stress
Author(s): Tsuneaki Ohta; Shuichi Noda; Masanori Kasai; Hiroshi Hoga
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Paper Abstract

X-ray mask displacements were simulated using finite element method in order to estimate the requirements for the stress and stress distribution of the absorber and membranes. The structure of X-ray mask in this simulation was as follows: the substrate was 3inch φ and 2mm thick Si wafer, the membranes were 2μm thick SiN and SiC, absorber thickness was 0.5μm, and window area was 25mm square. The simulations were focused on the film stress, various absorber patterns, such as half pattern of window, line and space patterns, and the influence of backetch.

Paper Details

Date Published: 24 July 1996
PDF: 8 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245214
Show Author Affiliations
Tsuneaki Ohta, Oki Electric Industry Co., Ltd. (Japan)
Shuichi Noda, Oki Electric Industry Co., Ltd. (Japan)
Masanori Kasai, Oki Electric Industry Co., Ltd. (Japan)
Hiroshi Hoga, Oki Electric Industry Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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