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Proceedings Paper

Subquarter-micron lithography with dual-trench-type alternating PSM
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Paper Abstract

Lithographic characteristics of dual-trench type alternating phase-shifting mask (PSM), whose shifters are made of perpendicular trenches with different depth alternately, are evaluated numerically and experimentally. The structure of dual-trench type PSM could reduce the difference of adjacent peak intensities created by topography on the mask. Exposure characteristics of the mask varied with depth of deep and shallow trenches, and depth of both trenches should be controlled so as to have the optimum value. Mainly, the difference in depth of deep and shallow trenches caused varying "effective phase" and depth of shallow trench caused varying "effective transmission". The depth of focus using the mask was sensitive to the effective phase difference controlled by adjusting etched depth difference between both trenches, and insensitive to depth of shallow portion. From analysis of mask process margin, respecting acceptable error of depth of both trenches, it was found that the effective transmission error caused reduction of acceptable depth error.

Paper Details

Date Published: 24 July 1996
PDF: 9 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245213
Show Author Affiliations
Hideki Kanai, Toshiba Corp. (Japan)
Kenji Kawano, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Eishi Shiobara, Toshiba Corp. (Japan)
Masami Aoki, Toshiba Corp. (Japan)
Ikuo Yoneda, Toshiba Corp. (Japan)
Shinichi Ito, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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