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Proceedings Paper

Ta-Si-O absorptive shifter for the attenuated phase-shifting mask
Author(s): Y. S. Yan; C. C. Cheng; C. L. Lin; J. Y. Gan; T. B. Wu; Laurent C. Tuo; Jia-Jing Wang
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Paper Abstract

Ta-Si-O composite films have been developed for the single-layer attenuated phase-shifting mask (A.PSM). The films were deposited in an reactive-sputtering system with separating Ta and Si guns. The refractive index and the extinction coefficient of films were tuned by changing the oxygen flow rate and gun power of each gun. At the optimum condition, films with the required optical properties for APSM has been obtained. The films obtained will produce π-shift transmittance around 7% for both i-line and DUV lithography, and less than 25% of transmittance at 488 nm which is important for defect inspection. In addition, the films appear to be inert to hot sulfuric acid which is also important in mask cleaning. Together, Ta-Si-O composite film is expected to be a promising material of DUV absorptive shifter.

Paper Details

Date Published: 24 July 1996
PDF: 10 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245212
Show Author Affiliations
Y. S. Yan, National Tsing Hua Univ. (Taiwan)
C. C. Cheng, National Tsing Hua Univ. (Taiwan)
C. L. Lin, National Tsing Hua Univ. (Taiwan)
J. Y. Gan, National Tsing Hua Univ. (Taiwan)
T. B. Wu, National Tsing Hua Univ. (Taiwan)
Laurent C. Tuo, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jia-Jing Wang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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