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Proceedings Paper

Evaluation of performance of attenuated phase-shift mask using simulation
Author(s): Yuhichi Fukushima; Nobuhiko Fukuhara; Kohsuke Ueyama
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Paper Abstract

We evaluated printability of notch defects and accuracy of repaired defects in attenuated phase shift masks (=attenuated PSMs) by using the photo intensity simulation. It is shown that the defect in attenuated PSMs brought about the change in the pattern shape of an aerial image on a wafer and affected on the adjacent pattern. It is necessary to repair notch defects in a straight line pattern in a mask even if the size of the defect is minute, because just a small distortion of the transcribed pattern image is severely judged as a defect. The simulation was executed by the optical conditions of wavelength λ = 248nm, NA = 0.5, coherency σ = 0.3 and masks are 5x reticles. We are obtained the results that it is necessary to repair the defects of the size of 0.5 μm or more. Moreover, when the defect was repaired by the shading part so far, the distortion remained in the transcribed pattern image. We examined what the repaired shape is good to solve this problem.

Paper Details

Date Published: 24 July 1996
PDF: 8 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245210
Show Author Affiliations
Yuhichi Fukushima, Toppan Printing Co., Ltd. (Japan)
Nobuhiko Fukuhara, Toppan Printing Co., Ltd. (Japan)
Kohsuke Ueyama, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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