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Proceedings Paper

Regular doping structures: a Si-based, quantum-well infrared detector
Author(s): J. Frederick Koch
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Paper Abstract

Semiconductor structures are discussed in which the dopant impurities are arranged in an ordered or at least a partially regular manner. Various electronic properties of such arrays are examined, and it is shown how a layer of dopant atoms in silicon acts as a sensitive and tunable IR absorber.

Paper Details

Date Published: 1 February 1991
PDF: 9 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24521
Show Author Affiliations
J. Frederick Koch, Technische Univ. Muenchen (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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