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Proceedings Paper

New concept for negative-tone electron-beam resist
Author(s): Yasumasa Wada; Motofuni Kashiwagi; H. Tanaka; Atsushi Kawata; Kiyoto Tanaka; Yuhichi Yamamoto
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Paper Abstract

Negative tone electron beam resist forms pattern with radical crosslinking brought by electron beam irradiation and succeeding chemical reactions resulting radical species. The important problem of current negative tone resist is insufficient pattern profile because of tailing and scum found after development. We have solved these problems with reducing the unnecessary cross linking by loading particular radical captures in resist. This paper presents the technical result of resolution improvement achieved on the ZEN4000 that consists of p-chloromethylstyrene and p-chlorostyrene negative electron beam resist series.

Paper Details

Date Published: 24 July 1996
PDF: 8 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245207
Show Author Affiliations
Yasumasa Wada, Nippon Zeon Co., Ltd. (Japan)
Motofuni Kashiwagi, Nippon Zeon Co., Ltd. (Japan)
H. Tanaka, Nippon Zeon Co., Ltd. (Japan)
Atsushi Kawata, Nippon Zeon Co., Ltd. (Japan)
Kiyoto Tanaka, Nippon Zeon Co., Ltd. (Japan)
Yuhichi Yamamoto, Fujitsu Co. Ltd. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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