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Proceedings Paper

Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure
Author(s): Seungbum Hong; Eunah Kim; Zhong-Tao Jiang; Byeong-Soo Bae; Kwangsoo No; Woosuck Shin; Sung-Chul Lim; Sang-Gyun Woo; Young-Bum Koh
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Paper Abstract

A simple method of optical constant evaluation is employed to measure refractive index (n) and absorption coefficient (k) of chromium oxide thin films deposited on transparent substrate in deep ultraviolet range. The validity of the method is verified by comparison with n. k values calculated from transmittance and phase shift measurement. The calculated n, k values of chromium oxide film were 3.3 and 0.64 at 193 nrn, respectively. It was found that there existed optimum film thickness in the range of 45-55 nm for DUV attenuated phase shift at 193 nm. Moreover the film quality has been improved to yield smooth and uniform film surface.

Paper Details

Date Published: 24 July 1996
PDF: 4 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245204
Show Author Affiliations
Seungbum Hong, Korea Advanced Institute of Science and Technology (South Korea)
Eunah Kim, Korea Advanced Institute of Science and Technology (South Korea)
Zhong-Tao Jiang, Korea Advanced Institute of Science and Technology (South Korea)
Byeong-Soo Bae, Korea Advanced Institute of Science and Technology (South Korea)
Kwangsoo No, Korea Advanced Institute of Science and Technology (South Korea)
Woosuck Shin, Nagoya Univ. (Japan)
Sung-Chul Lim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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