Share Email Print

Proceedings Paper

Cleaning process for x-ray masks
Author(s): Yasunao Saitoh; Takashi Ohkubo; Ikuo Okada; Misao Sekimoto; Tadahito Matsuda
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A cleaning process for x-ray mask fabrication has been developed that virtually eliminates mask defects. To introduce the wet-cleaning process into the x-ray mask fabrication process, a new mask cleaning system is manufactured to prevent the mask membrane from breaking due to liquid pressure. Because Ta is chemically stable to a strong acid, we employ a wet-cleaning process using a strong acid such as H2S04 + H202 in order to eliminate contamination that occurs in the x-ray mask fabrication process, such as back-etching of the substrate. and Ta pattern etching. Most metallic and organic defects were eliminated by the strong acid wet-cleaning. By introducing this cleaning process, occurrence of mask defects was drastically reduced: the defect density was reduced to less than 5 defects/cm2 The patterns with widths below 0.2 μm were not damaged by acid cleaning, and pattern positioning distortion did not occur.

Paper Details

Date Published: 24 July 1996
PDF: 6 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245199
Show Author Affiliations
Yasunao Saitoh, NTT Advanced Technology Corp. (Japan)
Takashi Ohkubo, NTT Advanced Technology Corp. (Japan)
Ikuo Okada, NTT LSI Labs. (Japan)
Misao Sekimoto, NTT LSI Labs. (Japan)
Tadahito Matsuda, NTT LSI Labs. (Japan)

Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

© SPIE. Terms of Use
Back to Top