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Proceedings Paper

Highly stiff x-ray mask blank with heat resistance and inertness to chemicals
Author(s): Kenji Marumoto; Hideki Yabe; Sunao Aya; Koji Kise; Seiichi Tanji; Nobuyuki Minami
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Paper Abstract

A novel bonding technique with heat resistance and/or inertness to chemicals is required to realize x-ray mask processes in which Si substrate is mounted on support plate at an initial stage. From this standpoint, we have developed a distortion-free bonding method using Au-Si solder to join Si wafer to SiC ceramic support plate which is effective to reduce the placement error due to mask chucking. The change in wafer bow due to bonding was less than 1 μm in spite of comparatively higher bonding temperature of 620°C , and that due to heating at 400°C for lhr is also negligible. It has been also confirmed that both SiC ceramics and Au-Si solder inert to chemicals such as a strong acid used in the back-etch process. Highly stiff x-ray mask blank with heat resistance and inertness to chemicals has been developed by using this method, where back-etched Si wafer with SiC membrane was successfully joined to SiC ceramic support plate. By using this mask blank, x-ray mask process becomes similar to photomask process, and the remained problems for improving the placement accuracy are only precise EB writing and the reproducible deposition of stress-free absorber.

Paper Details

Date Published: 24 July 1996
PDF: 10 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245198
Show Author Affiliations
Kenji Marumoto, Mitsubishi Electric Corp. (Japan)
Hideki Yabe, Mitsubishi Electric Corp. (Japan)
Sunao Aya, Mitsubishi Electric Corp. (Japan)
Koji Kise, Mitsubishi Electric Corp. (Japan)
Seiichi Tanji, Nihon Cement Co., Ltd. (Japan)
Nobuyuki Minami, Nihon Cement Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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