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Proceedings Paper

Gain and noise in very high-gain avalanche photodiodes: theory and experiment
Author(s): Robert H. Redus; Richard Farrell
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Paper Abstract

Large area silicon avalanche photodiodes have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter keff was found to be 7.2 X 10-4, allowing a high signal to noise ratio at gains of several thousand.

Paper Details

Date Published: 19 July 1996
PDF: 10 pages
Proc. SPIE 2859, Hard X-Ray/Gamma-Ray and Neutron Optics, Sensors, and Applications, (19 July 1996); doi: 10.1117/12.245118
Show Author Affiliations
Robert H. Redus, Radiation Monitoring Devices, Inc. (United States)
Richard Farrell, Radiation Monitoring Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 2859:
Hard X-Ray/Gamma-Ray and Neutron Optics, Sensors, and Applications
Richard B. Hoover; F. Patrick Doty, Editor(s)

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