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Proceedings Paper

Optical fiber amplifiers
Author(s): Tetsuhiko Ikegami; Motohiro Nakahara
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Paper Abstract

Recent progress on an erbium-doped optical fiber amplifier (EDFA) pumped with a 0.98 micron laser diode is reported. An erbium-doped fiber with a very high gain coefficient of 11.0 dB/mW has been achieved using an extended VAD method. A high power 0.98 micron laser diode with a strained-layer InGaAs quantum well laser structure has been developed as the pumping light source. By employing these key components in the EDFA, a compact and highly efficient EDFA module has been fabricated successfully. The module size is only 36 cc. It attained a 33 dB net gain at 1.536 microns and it consumed only 175 mW of electricity.

Paper Details

Date Published: 1 February 1991
PDF: 11 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24511
Show Author Affiliations
Tetsuhiko Ikegami, NTT Opto-Electronics Labs. (Japan)
Motohiro Nakahara, NTT Opto-Electronics Labs. (Japan)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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