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Proceedings Paper

InGaAs/InP monolithic photoreceivers for 1.3-1.5 um optical fiber transmission
Author(s): Andre Scavennec; M. Billard; P. Blanconnier; E. Caquot; P. Carer; Louis Giraudet; L. Nguyen; F. Lugiez; Jean-Pierre Praseuth
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Paper Abstract

The sensitivity of InGaAsIInP monolithic photoreceivers for 1 . 3 - 1. 5 . tm has been largely improved in recent years now reaching the sensitivity figures of hybrid InGaAs pin/GaAs MESFET receivers. The characteristics of an integrated InGaAsfJnP pin-JFET front-end based on MBE growth and diffused junctions are analysed. The results are used to illustrate some pending problems oflnGaAs FETs requiring future improvement.

Paper Details

Date Published: 1 February 1991
PDF: 7 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24510
Show Author Affiliations
Andre Scavennec, CNET (France)
M. Billard, CNET (France)
P. Blanconnier, CNET (France)
E. Caquot, CNET (France)
P. Carer, CNET (France)
Louis Giraudet, CNET (France)
L. Nguyen, CNET (France)
F. Lugiez, CNET (France)
Jean-Pierre Praseuth, CNET (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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