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Proceedings Paper

Optically coupled 3-D common memory with GaAs on Si structure
Author(s): Masataka Hirose; Harumi Takata; Mitsumasa Koyanagi
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Paper Abstract

An ultra fast data transfer speed is demonstrated for a novel three-dimensional (3D) Static Random Access Memory (SRAM) consisting of multilayer silicon LSI chips on which GaAs LEDs and photodetectors are monolithically integrated for vertical optical interconnections. A unique feature of this system is the capability of parallel data transfer from one memory layer to the upper and lower memory layers by the optical interconnections. The results of static and dynamic simulations of the optically coupled 3D common memory have indicated that a block of 512 bits data can be transferred through four memory layers within 16 nsec. This is an equivalent data transfer speed of 128 Gbits/sec/layer.

Paper Details

Date Published: 1 February 1991
PDF: 7 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24509
Show Author Affiliations
Masataka Hirose, Hiroshima Univ. (Japan)
Harumi Takata, Hiroshima Univ. (Japan)
Mitsumasa Koyanagi, Hiroshima Univ. (Japan)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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