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Proceedings Paper

Recent progress in device-oriented II-VI research at the University of Wuerzburg
Author(s): Gottfried Landwehr; Andreas Waag; K. Hofmann; Norbert Kallis; Robert N. Bicknell-Tassius
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Paper Abstract

Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28. 0 V and ideality factors near 1. 7. These MESFETs exhibit good depleting mode action.

Paper Details

Date Published: 1 February 1991
PDF: 9 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24507
Show Author Affiliations
Gottfried Landwehr, Univ. Wuerzburg (Germany)
Andreas Waag, Univ. Wuerzburg (Germany)
K. Hofmann, Univ. Wuerzburg (Germany)
Norbert Kallis, Univ. Wuerzburg (Germany)
Robert N. Bicknell-Tassius, Univ. Wuerzburg (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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