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Proceedings Paper

Structure optimization of selectively doped heterojunctions: evidences for a magnetically induced Wigner solidification
Author(s): Bernard Etienne; E. Paris; C. Dorin; Veronique Thierry-Mieg; F. I. B. Williams; D. C. Glattly; G. Deville; E. Y. Andrei; Oliver Probst
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Paper Abstract

We discuss the current state of knowledge concerning the three following questions : i) what is the physical system most appropriate for the observation of the Wigner transition in an electron plasma ? ii) how such a system can be optimized in order to limit competing effects like single-particle localization ? iii) which experimental techniques allow unambiguous observation of this transition ? We present the results concerning our study of dense quantum two-dimensional electron systems in low disordered selectively doped GaAs/GaAIAs heterojunctions and our evidences for a magnetically induced Wigner transition obtained concomitantly by resonant absorption of radio-frequency waves and by voltage-source transport measurements at low temperature and high magnetic field.

Paper Details

Date Published: 1 February 1991
PDF: 12 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24506
Show Author Affiliations
Bernard Etienne, Lab. de Microstructures et de Microelectronique/CNRS (France)
E. Paris, Lab. de Microstructures et de Microelectronique/CNRS (France)
C. Dorin, Lab. de Microstructures et de Microelectronique/CNRS (France)
Veronique Thierry-Mieg, Lab. de Microstructures et de Microelectronique/CNRS (France)
F. I. B. Williams, CEA-CEN Saclay (France)
D. C. Glattly, CEA-CEN Saclay (France)
G. Deville, CEA-CEN Saclay (France)
E. Y. Andrei, Rutgers Univ. (United States)
Oliver Probst, CEA-CEN Saclay (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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