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Proceedings Paper

Modulation doping and delta doping of III-V compound semiconductors
Author(s): Peter Hendriks; E. A. E. Zwaal; Jos E. M. Haverkort; Joachim H. Wolter
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Paper Abstract

The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and switching effects. The concept of electric-field-induced parallel conduction is set forth and shown to explain the current instabilities and current collapse at high electric fields. Delta doping is shown to be effective for electrooptic devices such as modulators. MQW modulators with delta-doped contacts can be used as waveguides in complicated coupler networks, or they can be optimized for a high on/off ratio by increasing device length without increasing propagation loss.

Paper Details

Date Published: 1 February 1991
PDF: 11 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24504
Show Author Affiliations
Peter Hendriks, Eindhoven Univ. of Technology (Netherlands)
E. A. E. Zwaal, Eindhoven Univ. of Technology (Netherlands)
Jos E. M. Haverkort, Eindhoven Univ. of Technology (Netherlands)
Joachim H. Wolter, Eindhoven Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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