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Proceedings Paper

Photodetectors: how to integrate them with microelectronic and optical devices
Author(s): Didier J. Decoster; Jean-Pierre Vilcot
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Paper Abstract

Progress in the area of integrated receivers is surveyed, with emphasis on the use of large lattice mismatch epitaxy, selective growth, and planar structure to reduce the technological difficulties associated with the fabrication of these integrated circuits. Some examples of monolithic integration of photodetectors with transistors and optical waveguides are presented. Particular attention is given to a monolithic resonant photoreceiver for long-wavelength and microwave applications, fabricated using lattice mismatch heteroepitaxies and selective growth.

Paper Details

Date Published: 1 February 1991
PDF: 8 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24499
Show Author Affiliations
Didier J. Decoster, Univ. des Sciences et Techniques de Lille-Flandre-Artois (France)
Jean-Pierre Vilcot, Univ. des Sciences et Techniques de Lille-Flandre-Artois (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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