Share Email Print
cover

Proceedings Paper

Bistability of the Sn donor in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy
Author(s): Pierre J. L. Gibart; Don L. Williamson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Details

Date Published: 1 February 1991
PDF: 13 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24497
Show Author Affiliations
Pierre J. L. Gibart, Lab. de Physique du Solide et Energie Solaire/CNRS (France)
Don L. Williamson, Colorado School of Mines (United States)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

© SPIE. Terms of Use
Back to Top