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Proceedings Paper

Shallow-deep bistability behavior of the DX-centers in n-AlxGa1-xAs and the EL2-defects in n-GaAs
Author(s): Abderrahmane Kadri; Jean-Claude Portal
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Paper Details

Date Published: 1 February 1991
PDF: 8 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24495
Show Author Affiliations
Abderrahmane Kadri, Univ. of Oran-Es-Senia (Algeria)
Jean-Claude Portal, INSA and SNCI/CNRS (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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