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Proceedings Paper

Effective laser with active element rectangular geometry
Author(s): Alexander Anatolievi Danilov; Ernest Y. Nikirui; Vyacheslav V. Osiko; Valery G. Polushkin; Svjatoslav Nicolaevit Sorokin; M. I. Timoshechkin
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Paper Abstract

Reported about building solidstate laser with rectangular active element. In high power regime laser with active element from neodimium doped GGG crystal became power l8OWt by repetition rate 25Hz and absolute efficiently 3. By beam divergence near lOmrad specific power raising compose 7. 5Wt/sm The interest to the lasers with rectangular active elements including lasers with waveguide active elements (1 is based mainly on the fact that these lasers allows to obtain high average power generation regime under simultaneous suppression of thermooptical effects (3 Maximum efficiency of such lasers at lamp pumping is for the best samples up to 2-2. 4 [5. 7]. Along with for the mostly powerful lasers (7] pulse repetition rates are in the interval 35c '' as far as for real high average power regime frequencies more than lOc are characteristic. The results of studing solid state laser with rectangular active element on the base of 0(30 crystal doped by Nd are presented below. Laser designed have demonstrated record value of efficiency at repetition rate up to 25c . Compact double-side illuminator to supply symmetrical illumination of active element was used. Active element lateral surface cooling was provided due to immediate contact with coolant (distilled water with chromium oxide O. 5g/l). Laser resonator length was 650 mm. Plate dielectric mirrors were used out mirror refraction coefficient being varied in experiments. Activators ions concentration in the chosen active

Paper Details

Date Published: 1 February 1991
PDF: 5 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24486
Show Author Affiliations
Alexander Anatolievi Danilov, Institute of General Physics (Russia)
Ernest Y. Nikirui, Institute of General Physics (Russia)
Vyacheslav V. Osiko, Institute of General Physics (Russia)
Valery G. Polushkin, Institute of General Physics (Russia)
Svjatoslav Nicolaevit Sorokin, Institute of General Physics (Russia)
M. I. Timoshechkin, Institute of General Physics (Russia)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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