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Proceedings Paper

Nonlinear optical gain in InGaAs/InGaAsP quantum-wells
Author(s): M. Rosenzweig; M. Moehrle; H. Dueser; M. Tischel; R. Heitz; Axel Hoffmann
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Paper Abstract

InGaAs/InGaAsP-multi-quantum--well-layers are preferably used as the active region in long-wavelength semiconductor lasers. In this work we present calculations of their optical gain in dependence of the carrier density . These calculations are compared with measurements of electrically and optically excited gain spectra of such laser structures for 1. SSim emission wavelength with different numbers of wells. In contrast to conventional double heterostructure lasers a distinct sublinear increase of the gain g with increasing carrier densities N is observed which is well pronounced for low well numbers and can be described approximately with a logarithmic equation g''''ln(N) quite in accordance with theoretical predictions.

Paper Details

Date Published: 1 February 1991
PDF: 12 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24481
Show Author Affiliations
M. Rosenzweig, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
M. Moehrle, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
H. Dueser, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
M. Tischel, Technische Univ. Berlin (Germany)
R. Heitz, Technische Univ. Berlin (Germany)
Axel Hoffmann, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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