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Proceedings Paper

Deep-level configuration of GaAs:Si:Cu: a material for a new type of optoelectronic switch
Author(s): Karl H. Schoenbach; Hans-Joachim Schulz; Vishnu K. Lakdawala; B. M. Kimpel; Ralf Peter Brinkmann; Rudolf K.F. Germer; Gordon R. Barevadia
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Paper Details

Date Published: 1 February 1991
PDF: 8 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24476
Show Author Affiliations
Karl H. Schoenbach, Old Dominion Univ. (Germany)
Hans-Joachim Schulz, Fritz-Haber-Institute der Max-Planck-Gesellschaft (Germany)
Vishnu K. Lakdawala, Old Dominion Univ. (Germany)
B. M. Kimpel, Fritz-Haber-Institute der Max-Planck-Gesellschaft (Germany)
Ralf Peter Brinkmann, Old Dominion Univ. (Germany)
Rudolf K.F. Germer, Institut fuer Technische Physik (Germany)
Gordon R. Barevadia, Old Dominion Univ. (Germany)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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