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Proceedings Paper

Relaxation-rate of phonon momentum in semiconductors
Author(s): Rita Gupta; Brian K. Ridley
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Paper Abstract

In transport the creation of hot LU phonons causes a reduction in the carrier energy relaxation rate but an enhancement of the momentum relaxation rate. The magnitude of the latter determines the drift velocity attainable at high electric fields - which in turn limits the speed of devices such as FETs. How big this effect is depends on the rate of relaxation of phonon drift. Mechanisms for this relaxation are discussed and phonon-momentum relaxation rates are calculated for bulk and layered structures. Processes considered include the FrOhlich interaction with charged impurities phonon-phonon scattering and scattering at interface irregularities. We conclude that the quality of the material structure is crucial.

Paper Details

Date Published: 1 February 1991
PDF: 8 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24465
Show Author Affiliations
Rita Gupta, Univ. of Essex (United Kingdom)
Brian K. Ridley, Univ. of Essex (United Kingdom)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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