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Proceedings Paper

Generalized transport model for heterojunction: a computer modeling approach
Author(s): Giovanni Bellomi; Stefano Bottacchi
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Paper Abstract

To overcome the discrepancy existing between the well known therinionic emission and drift-diffusion models particularly critical in arbitrary graded isotype heterojunctions a unified transport model has been considered. The algorithm is based on a simultaneous numerical solution of the one dimensional Poisson and Boltzmann equations using an iterative method to obtain the self-consistent potential and distribution functions for every polarization condition. I .

Paper Details

Date Published: 1 February 1991
PDF: 8 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24461
Show Author Affiliations
Giovanni Bellomi, Telettra S.p.A. (Italy)
Stefano Bottacchi, Telettra S.p.A. (Italy)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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