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Proceedings Paper

Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD
Author(s): Jing-Fu Zhao; Y. Q. Li; Chyi Shyuan Chern; Wei-Feng Huang; Peter E. Norris; B. M. Gallois; B. H. Kear; P. Lu; G. A. Kulesha; F. Cosandey
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Paper Abstract

MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high quality YBCO superconducting films. The use of these methods to grow YBCO films with Tc in the range 88-90 K and Jc(77 K) repeatably in excess of 10 exp 6 A/sq cm is reported. This can be accomplished at substrate temperatures as low as 730 C, in the case of MOCVD, and 670 C for PE-MOCVD, through the use of N2O as the oxidant source gas. Growth at temperatures down to 570 C has been demonstrated but as the cost of Tc decreasing to 72 K. Still, these results are very promising for development of a low temperature process for the growth of YBCO which will be compatible with active device technologies.

Paper Details

Date Published: 1 February 1991
PDF: 9 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24457
Show Author Affiliations
Jing-Fu Zhao, EMCORE Corp. (United States)
Y. Q. Li, Stevens Institute of Technology (United States)
Chyi Shyuan Chern, Rutgers Univ. (United States)
Wei-Feng Huang, Rutgers Univ. (United States)
Peter E. Norris, EMCORE Corp. (United States)
B. M. Gallois, Stevens Institute of Technology (United States)
B. H. Kear, Rutgers Univ. (United States)
P. Lu, Rutgers Univ. (United States)
G. A. Kulesha, Stevens Institute of Technology (United States)
F. Cosandey, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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