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Proceedings Paper

Bonding and nonequilibrium crystallization of a-C:H/a-Se and a-C:H/KCl
Author(s): Da-Ren He; Xiuyan Ji; Ruo Bao Wang; Qihai Liu; Wangdi Wang; Maili Liu; Weizong Chen; Zhiyuan Liu; Wanxi Ji; Ren-ji Zhang
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Paper Abstract

IR analysis shown the ratio between different CH hybridization bonds sp1:sp2:sp3 1O:O. 09:O. 81 in a-C:H layer of a-C:H/a-Se and 0:0:1 of a-C:H/KC1. The ratio between the sp3-type configurations is sp3CH:sp3CH:sp3 CH3 0. 28:0. 38:0. 34 in a-C:H/a-Se and 0. 45:0. 33:0. 22 in a-C:H/KC1. A model of the non-equilibrium crystaflization of the layer in both films is proposed. Computer simulated figures are fractals with the dimension D1 1. 37 0. 02 in a-C:H/a-Se and D2 1. 81 in a-C:H/KC1. In good agreement with the experimental data D1 1. 35 0. 04 and D2 1. 77 0. 03.

Paper Details

Date Published: 1 February 1991
PDF: 6 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24452
Show Author Affiliations
Da-Ren He, J. W. Goethe Univ. (Germany)
Northwest Univ. (China)
Xiuyan Ji, Northwest Univ. (China)
Ruo Bao Wang, Northwest Univ. (China)
Qihai Liu, Northwest Univ. (China)
Wangdi Wang, Northwest Univ. (China)
Maili Liu, Northwest Univ. (China)
Weizong Chen, Northwest Univ. (China)
Zhiyuan Liu, Northwest Univ. (China)
Wanxi Ji, Northwest Univ. (China)
Ren-ji Zhang, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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