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Proceedings Paper

High-efficiency vertical-cavity lasers and modulators
Author(s): Larry A. Coldren; Scott W. Corzine; Randall S. Geels; Arthur C. Gossard; K. K. Law; James L. Merz; Jeff W. Scott; Robert J. Simes; Ran Hong Yan
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Paper Abstract

Within the past year significant advances in the development of high-performance vertical-cavity surface-emitting laser (VCSELs) and quantum-well modulators has been achieved. Large arrays of VCSELs with submilliamp thresholds and diffraction limited beams have been produced by MBE growth of InGaAs/GaAs strained-layer quantum-well active regions encompassed by integral AlAs/GaAs quarter-wave stack mirrors. Also, using similar technology, asymmetric transverse Fabry-Perot modulators with transfer efficiencies about 20 percent/V and high-extinction on/off modulation with voltage swing of only 2 volts have been demonstrated. Using superlattice active regions, room-temperature blue shifted absorption modulators have been produced, and self-electrooptic effect devices with record on/off ratios (more than 100:1) have been achieved.

Paper Details

Date Published: 1 February 1991
PDF: 14 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24443
Show Author Affiliations
Larry A. Coldren, Univ. of California/Santa Barbara (United States)
Scott W. Corzine, Univ. of California/Santa Barbara (United States)
Randall S. Geels, Univ. of California/Santa Barbara (United States)
Arthur C. Gossard, Univ. of California/Santa Barbara (United States)
K. K. Law, Univ. of California/Santa Barbara (United States)
James L. Merz, Univ. of California/Santa Barbara (United States)
Jeff W. Scott, Univ. of California/Santa Barbara (United States)
Robert J. Simes, Univ. of California/Santa Barbara (United States)
Ran Hong Yan, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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