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Proceedings Paper

Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface
Author(s): Ryszard J. Iwanowski; Jakub J. Tatarkiewicz
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Paper Abstract

The authors perform an analysis of silicon defect stncture as a function of irradiation dose based mainly on their infrared absorption data for neutron-damaged Si and the available literature results for neutron- and electron-irradiated Si . Remarkable correlations between Fermi level position in irradiated Si and at the silicon - (reactive and unreactive ) metal interface are presented and discussed.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24440
Show Author Affiliations
Ryszard J. Iwanowski, Institute of Physics (Poland)
Jakub J. Tatarkiewicz, Institute of Physics (Poland)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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