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Proceedings Paper

High-conducting p+-InGaAs toplayers produced by simultaneous diffusion of Zn and Cd
Author(s): Bernd Gruska; P. Ambree; K. Wandel; U. Wielsch
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Paper Abstract

Simultaneous diffusion of Zn and Cd yields shallow and high doped pt_InGaAs layers. Using a closed ampoule technique an increa sing amount of CdAs2 in the Cd3As2/Zn3As2 source results in a decrea sing diffusion depth whereas a high hole concentration level can be realised. The experimental result of the simultaneous penetration of Zn and Cd atoms into the crystal can be understood on the basis of an interstitialsubstitutional diffusion mechanism.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24439
Show Author Affiliations
Bernd Gruska, Humboldt-Univ. (Germany)
P. Ambree, Humboldt-Univ. (Germany)
K. Wandel, Humboldt-Univ. (Germany)
U. Wielsch, Humboldt-Univ. (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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