Share Email Print
cover

Proceedings Paper

Determination of electrostatic potentials and charge distributions in bulk and at interfaces by electron microscopy techniques
Author(s): B. Hugsted; K. Gjonnes; J. Tafto; Jon Gjonnes; H. Matsuhata
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

High energy electron diffraction is sensitive to details in charge and potential distribution since scattering occurs by the net charge or electrostatic potential. Several techniques have been developped for characterization the atomic and electronic structure at or near interfaces: convergent beam profiles critical voltage effect in electron diffraction reflection/refraction at interfaces. Appplications are shown to bulk semiconductors single interfaces and multilayers.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24438
Show Author Affiliations
B. Hugsted, Univ. of Oslo (Norway)
K. Gjonnes, Univ. of Oslo (Norway)
J. Tafto, Univ. of Oslo (Norway)
Jon Gjonnes, Univ. of Oslo (Norway)
H. Matsuhata, Electrotechnical Lab. (Japan)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

© SPIE. Terms of Use
Back to Top