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Proceedings Paper

Selectively grown InxGa1-xAs and InxGa1-xP structures: locally resolved stoichiometry determination by Raman spectroscopy
Author(s): Jean Geurts; Jo Finders; O. Kayser; Berhard Opitz; M. Maassen; R. Westphalen; P. Balk
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Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24437
Show Author Affiliations
Jean Geurts, RWTH Aachen (Germany)
Jo Finders, RWTH Aachen (Germany)
O. Kayser, RWTH Aachen (Germany)
Berhard Opitz, RWTH Aachen (Germany)
M. Maassen, RWTH Aachen (Germany)
R. Westphalen, RWTH Aachen (Germany)
P. Balk, RWTH Aachen (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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